The temperature dependence of the volt-ampere characteristics of photoelectric converters (PEC) p-Si/polymer material/$SnO_2$ is investigated for samples with different levels of silicon doping. The relation is established between the mechanism of current-carrier transport and the no-load potential $V_{хх}$. It is shown that the reduction in $V_{хх}$ with increase in the level of silicon doping may be associated with increase in the PEC dark current on account of the multistage-tunneling mechanism.
Department of Quantum Radiophysics, Faculty of Physics, Research Institute of Nuclear Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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