Annotation
It is shown that p-n conversion under electron bombardment of $р-InSb\langle Ge\rangle$ samples, the electron concentration passes through а maximum, and а limiting state with n- type conductivity is reached. These re sults are explained in terms of the formation of complexes consisting of primary defects and impurity atoms.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
N.В. Brandt, Е.Р. Skipetrov, V.V. Dmitriev, G.I. Kol'tsov, and Е.А. Ladygin
Chair of Low Temperature Physics
Chair of Low Temperature Physics
Science News of the Faculty of Physics, Lomonosov Moscow State University
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