Annotation
Low-energy electron radiation is shown to bе сараblе of modifying substantially the fluctuation relief of the $Si—SiO_2$ interface and increasing the density of "fluctuational" surface electron states of the interface.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
S.N. Kozlov and А.Yu. Potapov
Chair of General Physics, Chemistry Department
Chair of General Physics, Chemistry Department
Science News of the Faculty of Physics, Lomonosov Moscow State University
This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.