Influence of electron injection from Si into $SiO_2$ on the electrical instability of metal- dielectric - semiconductor structures

The laws of electrical instability of silicon metal-dielectric-semiconductor structures are studied as а function of the quantity of electrons injected from silicon into the $SiO_2$ layer and the temperature. It is shown that the electrical stability of inj ection-degraded structures is determined bу the superposition of two effects: the appearance of an additional mobile ionic charge and the generation and recharging of "slow" electron states.