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Interaction between microwaves and semiconductor wafer-mirror structure

O.G. Koshelev, E.A. Forsh

Moscow University Physics Bulletin 1999. 54. N 1. P. 85

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Annotation

The interference of microwaves in a structure composed of a weakly absorbing wafer, an air gap, and a mirror has been analyzed in a contact less fashion with a view to determining conductivity inhomogeneities in the wafer thickness. It is demonstrated that measuring the reflection coefficient of such a structure at a certain wavelength and an air gap values makes it possible to find the approximate values of the Fourier expansion coefficients of the wafer.

Rissian citation:
О.Г. Кошелев, Е.А. Форш.
О взаимодействии микроволн со структурой полупроводниковая пластина-зеркало.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1999. № 1. С. 65.
Authors
O.G. Koshelev, E.A. Forsh
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 1, 1999

Moscow University Physics Bulletin

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