A mathematical model describing transient processes in semiconductors has been studied. It has been shown that the original physical statement of the problem is reduced to the initial-boundary-value problem for a higher-order partial derivative equation of the composite type. Consideration of an appropriate one-dimensional initial-boundary-value problem has revealed full agreement of theoretical results obtained based on the proposed mathematical model with the observed dynatnic effect of space charge stratification in a semiconductor.
Department of Mathematics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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