Using the electrical compensation method in the photon energy range 1.1— 1.6 eV, spectral relations of the photocurrent of silicon photoelectric transducers irradiated with protons of 1.6 MeV average energy have been measured. It has been shown that with a high accuracy (1—2%) the measured spectra correspond to spectra calculated taking into account inhomogeneity of a proton-generated defect layer. The calculation technique used helps determine the thickness of a defective layer, the average minority-carrier lifetime in this layer and also obtain information on the nature of defect distribution there.
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia. Institute of Nuclear Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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