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The special features of the frequency dependence of phononless hopping conduction

M.A. Ormont

Moscow University Physics Bulletin 2012. 67. N 5. P. 443

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Annotation

Within the framework of perturbation theory the imaginary part of the phononless conduction of a lightly doped compensated semiconductor is calculated. It is shown that when the basis of localized atomic-like functions is used, the superlinear frequency dependence of the real part of the conduction corresponds to the approximately linear frequency dependence of the imaginary part of the conductivity. It has been found that at frequencies below the transition (crossover) frequency $\omega_{\rm cr}$ from the linear to quadratic frequency dependence of the real part of conductivity, the dielectric loss tangent depends weakly on the frequency and it is determined by the relationship of $\hbar\omega_{\rm cr}$ to the width of the impurity band. It is shown that measurements of the dielectric loss tangent can provide information on the localization radius of impurity states.

Received: 2012 April 12
Approved: 2012 November 2
PACS:
72.20.Ee Mobility edges; hopping transport
Rissian citation:
М.А. Ормонт.
Особенности частотной зависимости бесфононной прыжковой проводимости.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 2012. № 5. С. 31.
Authors
M.A. Ormont
Moscow State University, Moscow, 119991, Russia
Issue 5, 2012

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