Annotation
Defect formation in silicon-on-sapphire films under the action of a gas beam of 30 keV argon cluster ions is studied. Rutherford backscattering in the channeling mode is used to demonstrate the formation of a large number of defects in the volume of a specimen that is irradiated by a cluster ion beam without mass separation. If atomic and light cluster ions are removed from the beam, defect-free etching of the specimen occurs.
Received: 2015 December 3
Approved: 2016 March 11
PACS:
36.40.-c Atomic and molecular clusters
68.49.Sf Ion scattering from surfaces
68.49.Sf Ion scattering from surfaces
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
A.E. Ieshkin$^1$, A.A. Shemukhin$^2$, Yu.A. Ermakov$^2$, V.S. Chernysh$^{1,2}$
$^1$Department of Physics, Moscow State University, Moscow, 119991 Russia
$^2$Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991 Russia
$^1$Department of Physics, Moscow State University, Moscow, 119991 Russia
$^2$Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991 Russia
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