Adsorption of charged particles on a metal surface in the method of two-particle density functionals
Adsorption of charged particles on a metal surface in the method of two-particle density functionals
A.M. Gadzhiev, O.S. Erkovich, V.V. Komarov, A.M. Popova
The properties of an inhomogeneous electron gas near a metal surface were considered. A numerical analysis of the work function and the adsorption energy of hydrogen ions and atoms on the W, Ir, and Pd surfaces was carried out. The calculations were made by the method in which the system energy is a functional of the two-particle density function, and this enables one to take into account the exchange-correlation phenonema.
Show AbstractPhotodetachment of heluim-like hydrogen ion
Photodetachment of heluim-like hydrogen ion
S.M. Burkov$^1$, N.A. Letyaev$^2$, S.I. Strakhova$^2$
By using the $R$-matrix formation, cross-sections of the negative hydrogen ion photodetachment and parameters of the photoelectron angular distribution anisotropy have been calculated. The calculations have been performed in the close-coupling approximation of six states. Comparison has been made with the experimental and theoretical data obtained by other authors.
Show AbstractQuantum fluctuation and squeezed states in a nonlinear resonator
Quantum fluctuation and squeezed states in a nonlinear resonator
A.V. Belinskiy
A quantum solution of the problem of field evolution in a nonlinear resonator with random $Q$ factor is proposed. The inconsistency of relevant semiclassical theories has been demonstrated using the example of phase self-modulation or a paramagnetic gain which occurs in the resonator. In particular, the squeezing efficiency predicted by semiclassical theories proves to be overestimated and the regimes recommended to attain it do not prove to be optimal.
Show AbstractNumerical study of polarization hysteresis in a double-path optical system with nonlinear medium and rotating mirror
Numerical study of polarization hysteresis in a double-path optical system with nonlinear medium and rotating mirror
V.A. Bulokhova, A.A. Golubkov, Ya.M. Zhileikin, V.A. Makarov
The stability of stationary states of the field in a polarization reflector has been studied. The existence of polarization bistability and effects of hysteresis in the reflector has been shown.
Show AbstractGroups of minor planets in the case of third-order commensurability
Groups of minor planets in the case of third-order commensurability
E.L. Vinnikov
Groups of resonance asteroids of the third order have been identified and the most numerous group corresponding to the 5:2 commensurability has been described statistically.
Show AbstractEstimation of the depth of isostatic compensation on Venus
Estimation of the depth of isostatic compensation on Venus
R.V. Gabbasov
The average global depth of the isostatic compensation on Venus has been evaluated by the transfer function method on the basis of data on the expansion of the gravitational field and relief of Venus in spherical functions up to the 18th order and power.
Show Abstract$Ar^+$ ion implantation-induced production in the dielectric layer of $Ge-GeO_2$ structures
$Ar^+$ ion implantation-induced production in the dielectric layer of $Ge-GeO_2$ structures
P.K. Kashkarov, A.V. Kolesnikov, A.V. Petrov, I.G. Stroyanova
$Ar^+$ ion implantation into a $GeO_2$ film on a Ge surface has been found to induce the generation of hole traps in the ion retardation layer and electron traps in the $GeO_2$ layer at the boundary with Ge, this being manifested by an increased instability of the surface charge under illustration.
Show AbstractLaser stimulation of nonstationary SHF absorption in a semiconductor
Laser stimulation of nonstationary SHF absorption in a semiconductor
A.N. Bachurin, A.V. Kozar', S.A. Krupenko
Considered was the interaction of continuous SHF radiation in the 8-mm wavelength range with laser radiation in the near IR range in a layer of pure crystalline silicon which filled completely the cross-section of a rectangular waveguide. An experimental method is proposed for studying photocarrier diffusion processes and determining charge carrier lifetimes.
Show AbstractOn photoelectric properties of ultrapure silicon
On photoelectric properties of ultrapure silicon
V.A. Morozova, O.G. Koshelev, V.V. Ostroborodova
Photoconductivity spectra of ultrapure silicon at 80 К exhibit transitions in which longitudinal acoustic phonons and excitons take part. It is shown that effective trapping centers with a concentration of about $5\times10^{11}$ cm$^{-3}$ change the effective lifetime of charge carriers at 80 К by 3 to 4 orders of magnitude.
Show AbstractSimulation of the electric structure of amorphous Ni-P systems
Simulation of the electric structure of amorphous Ni-P systems
V.S. Stepanyuk, B.L. Grigorenko, A.A. Katsnel'son, A. Sas, O.V. Farberovich
An attempt was made to trace the variation of the electric structure of a Ni-P system with increasing concentration of P. The effect of the changes at the first and second coordination shells on the electronic structure of the system under study was demonstrated.
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