Annotation
The effect of substitutional impurities on the temperature of metal-semiconductor phase transition was theoretically studied with consideration for diagonal and off-diagonal matrix elements of the perturbation operator. The results were compared with experiment data.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
V.I. Emelyanov, N.L. Levshin, A.L. Semenov
Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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