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The effect of illumination on parameters of microcrystalline hydrogenated silicon films with various boron doping levels

A.G. Kazanskii, P.A. Forsh

Moscow University Physics Bulletin 2001. 56. N 6. P. 59

  • Article
Annotation

The effect of illumination of microcrystalline hydrogenated silicon films lightdoped with boron on their electric and photoelectric parameters was studied. Changes in the conductivity and photoconductivity of films illuminated in dry air were observed. Illumination in a vacuum did not change the parameters of $p$-type films and decreased the conductivity of $n$-type films. Within the model based on the assumption that oxygen adsorbed by the films caused photoinduced parameter changes, the results were explained.

Authors
A.G. Kazanskii, P.A. Forsh
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 6, 2001

Moscow University Physics Bulletin

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