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M.V.Lomonosov Moscow State University
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Effect of local perturbations on the semiconductor-metal phase transition

Effect of local perturbations on the semiconductor-metal phase transition

V.I. Emelyanov, N.L. Levshin, S.Yu. Poroikov, A.L. Semenov

Moscow University Physics Bulletin 1991. 46. N 1. P. 62

The effects of various surface factors on the semiconductor-metal phase transition in $VO_2$ films were experimentally studied. It has been shown that adsorption of donor $Н_2О$ and $NH_3$ molecules lowers the phase transition critical temperature $Т_с$, adsorption of acceptor $O_2$ molecules exerts no effect on $Т_c$, while adsorption of oxygen ions increases $Т_с$. UV irradiation causes degradation of the semiconductor-metal phase transition. The effect of phase transition photosensitization has been discovered. The experimental data obtained and the data of other researchers on the effects of external factors on the phase transition have been analyzed in terms of the phonon anharmonism model developed by the authors.

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Evaluation of energy expenditure in sputtering of atoms from crystal surface. I. Computer modeling by the molecular dynamics method

Evaluation of energy expenditure in sputtering of atoms from crystal surface. I. Computer modeling by the molecular dynamics method

V.N. Samoilov

Moscow University Physics Bulletin 1991. 46. N 1. P. 74

The molecular dynamics method has been used to study the characteristics of the effect discovered earlier which consists in that an atom emitted from a surface loses energy not only to overcome the forces attracting it to the surface, but also, to a considerable degree, for the recoil of the surrounding atoms. It is shown that analytical models of sputtering do not provide a correct picture of the total energy consumption in sputtering of atoms from the surface, which leads to wrong formulas for the distribution function of sputtered atoms with respect to the kinetic energy and the polar angle.

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On the asymptotic solution of some dynamic problems of viscoelasticity

On the asymptotic solution of some dynamic problems of viscoelasticity

G.N. Medvedev, B.I. Morgunov

Moscow University Physics Bulletin 1991. 46. N 1. P. 80

An asymptotic procedure is described for an approximate solution of integro-differential equations in the dynamic viscoelasticity theory for media with relatively rapidly varying properties. The technique proposed is intended for calculating oscillatory and wave processes.

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Activationless electron transfer in primary charge separation processes of bacterial photosynthesis

Activationless electron transfer in primary charge separation processes of bacterial photosynthesis

A.K. Kukushkin, R.G. Sadygov

Moscow University Physics Bulletin 1991. 46. N 1. P. 83

The rate of electron transfer from dimer to monomer of bacteriochlorophyll in the reaction center of $\textit{Rhodopseudomonas Viridis}$ has been estimated in terms of the Fermi golden rule. An activationless electron transfer machanism has been considered.

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On nearest-to-classical mode states of a quantized electromagnetic field

On nearest-to-classical mode states of a quantized electromagnetic field

P.V. Elyutin

Moscow University Physics Bulletin 1991. 46. N 1. P. 86

The paper deals with mode states of a quantized electromagnetic field which are nearest to classical simultaneous eigenstates of the photon birth and annihilation operators. It is shown that such states are distinct from coherent states but transform into the latter in the limiting cases of weak and strong fields.

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Nonlinear upper hybrid waves at finite plasma temperatures

Nonlinear upper hybrid waves at finite plasma temperatures

I.M. Aleshin, L.S. Kuz'menkov, 0.0. Trubachev

Moscow University Physics Bulletin 1991. 46. N 1. P. 89

A solution of relativistic kinetic Vlasov-Maxwell equations is obtained and studied within the cubic field approximation for upper hybrid waves propagating perpendicularly to an external magnetic field.

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Transformation of the transverse spatial coherence and polarization properties of light propagating in nonlinear gyrotropic media

Transformation of the transverse spatial coherence and polarization properties of light propagating in nonlinear gyrotropic media

V.A. Aleshkevich, A.A. Golubkov, G.D. Kozhoridze, V.A. Makarov

Moscow University Physics Bulletin 1991. 46. N 1. P. 92

Transformation of spatial fluctuations of the field of a completely nonpolarized light wave at the initial stage of beam collapse has been studied and the critical self-focusing power has been computed. It is shown that as radiation propagates in an isotropic medium, the degree of polarization increases, while the spatial coherence decreases.

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The results of a numerical simulation of a developed anisotropic sea disturbance

The results of a numerical simulation of a developed anisotropic sea disturbance

A.L. Kuz'minskii

Moscow University Physics Bulletin 1991. 46. N 1. P. 95

The results are given of a numerical simulation of a highly anisotropic Phillips' model for a developed disturbance of the sea surface. A conclusion is made on the applicability of the single-harmonic approximation to the calculation of some disturbance characteristics.

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Effect of preliminary illumination on photoinduced formation of broken bonds in a-Si:H

Effect of preliminary illumination on photoinduced formation of broken bonds in a-Si:H

I.P. Zvyagin, I.A. Kurova, N.V. Meleshko, N.N. Orrnont

Moscow University Physics Bulletin 1991. 46. N 1. P. 98

A difference has been found in the kinetics of photoconductivity variation during illumination for undoped a-Si:H films preliminarily annealed or illuminated at elevated temperatures. Several mechanisms have been suggested for photoinduced formation of dangling bonds in the films after their pretreatment under different conditions.

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Effect of water vapor adsorption on electrophysical properties of Schottky barrier based on amorphous hydrated silicon

Effect of water vapor adsorption on electrophysical properties of Schottky barrier based on amorphous hydrated silicon

R.V. Prudnikov

Moscow University Physics Bulletin 1991. 46. N 1. P. 102

The effect of the adsorption of water vapors on the current-voltage characteristics and the frequency dispersion of the capacitance of an a-Si:H Schottky barrier has been studied. It is suggested that the orientational polarizability of water molecules decreases the height of the barrier and, besides, surface hydration affects the distribution of the density of localized electron states due to the saturation of broken silicon bonds with hydroxyl groups.

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