A photoinduced random field in a relaxation semiconductor
A photoinduced random field in a relaxation semiconductor
Yu.P. Drozhzhov
It is shown that an additional static random field may be formed in a relaxation semiconductor under the effect of an external electrical field and light.
Show AbstractThe temperature relations of electrical resistance and the structure of $GdFe_2$ films produced in a discharge with oscillating electrons.
The temperature relations of electrical resistance and the structure of $GdFe_2$ films produced in a discharge with oscillating electrons.
G.V. Smirnitskaya, E.M. Reikhrudel, E.V. Yakhshieva
The temperature relations of electrical conductivity, structure, and chemical compositon of $GdFe_2$ films of varying thickness produced in different modes of discharge with oscillating electrons are investigated. It is shown that the crystallization process is a function of the thickness of the film and not the discharge mode. An hysteresis path of the temperature relation of the electrical conductivity is detected and explained. Data from chemical analysis show that the crystallized films of $GdFe_2$ are resistant to the effect of air.
Show AbstractThe nature of traps in an oxide film on a gallium arsenide surface
The nature of traps in an oxide film on a gallium arsenide surface
A.V. Zoteev, P.K. Kashkarov, A.N. Obraztsov, Yu.N. Sosnovskikh, I.N. Sorokin
The processes of trap recharging in an anode oxide on a GaAs surface with illumination are investigated using a method of contact difference in potentials. It is shown that the concentration of traps for electrons and holes and the degree of defectiveness of the transitional field are altered depending on the conditions for oxide production and subsequent processing. Hypotheses about the nature of hole capture centers are formulated.
Show AbstractCharge transfer processes in $Ge-GeO_2$ structures with the effects of nano- and picosecond light pulses
Charge transfer processes in $Ge-GeO_2$ structures with the effects of nano- and picosecond light pulses
P.K. Kashkarov, A.V. Petrov
The dependences of optical charging of a germanium surface on the radiation exposure and temperature are studied in a broad range of intensities ($Р=10^{-4}-10^9 Вт/см^2$) and duration ($\tau = 3\cdot 10^{-11}-10^2с$) of light. It is shown that the value of the charge photoinjected into the oxide layer is determined by the exposure $P_{\tau}$ and is not a function of the intensity of the light. The temperature of the fine ($\sim$20 nm) surface layer of the sample is estimated directly at the moment of the laser pulse.
Show AbstractThe effect of correlation on the cross sections of the coherent Compton effect
The effect of correlation on the cross sections of the coherent Compton effect
V.A. Bushuev, A.O. Ait
The effect of correlation on the differential and integral cross sections of coherent Compton scatter in ideal crystals is theoretically examined. The dependence of the cross sections on the scattering angle, the quantum energy of the Compton scattering, the orientation of the scattering vector with respect to the inverse lattice vector, and on the order of reflection and the characteristic size of the electron shells is investigated. The results of the calculations may be used in formulating and interpreting experiments to observe coherent Compton scattering.
Show AbstractConsideration of three-particle Coulomb interaction in the final state of the process of twin photoionization of helium
Consideration of three-particle Coulomb interaction in the final state of the process of twin photoionization of helium
V.G. Levin, A.M. Mukhamedzhanov, A.V. Pavlichenkov
The differential cross sections of the ($\gamma, 2е$) process in a helium atom are examined for energies of incident photons on the order of several hundred electronvolts. It is shown that consideration of interaction of three charged particles in the final state greatly effects the behavior of the curves of the angular correlations of finite electrons.
Show AbstractThe dynamics of transitional processes in a microwave relativistic beam accelerator with dielectric filling
The dynamics of transitional processes in a microwave relativistic beam accelerator with dielectric filling
A.R. Maikov, A.D. Poezd, E.D. Poezd, S.A. Yakunin
The results of application of a technique for analyzing nonstationary processes in microwave (mw) electronics to a promising new class of mw instruments, which amplify and transform short and ultrashort electromagnetic field pulses, are presented. Nonstationary conditions of radiation which are nonlocal in time are presented.
Show AbstractA non-Markovian model of nonlinear receptivity of organic solvent solutions
A non-Markovian model of nonlinear receptivity of organic solvent solutions
V.M. Petnikova, S.A. Pleshanov, V.V. Shuvalov
An interpretation is made of experimental spectroscopic data acquired previously using a biharmonic pumping method in organic solvent solutions. It is shown that although consideration of the effects of the non-Markovian state of the process of oscillational relaxation essentially does not change the estimates of the time of transverse relaxation, it does determine the dispersion of the nonlinear receptivity in the field of misalignments in the pumping frequencies on the order of 10 $cm^{-1}$.
Show AbstractSolution of a scalar diffraction problem in a solid near a plane using an antenna potential model
Solution of a scalar diffraction problem in a solid near a plane using an antenna potential model
V.V. Kravtsov, P.K. Senatorov
An antenna potential method is used to solve the problem of diffraction in a solid near a plane boundary. The results are cited of a numerical calculation of diffraction of the field of a planar wave and of a point source in a sphere and in an elongated ellipsoid near the plane.
Show AbstractInteraction between water with amino acids and proteins studied through nuclear magnetic resonance relaxation methods
Interaction between water with amino acids and proteins studied through nuclear magnetic resonance relaxation methods
N.G. Volstrikova, V.P. Denisov, Yu.M. Petrusevich, O.P. Revokatov
The dependence of the rates of magnetic relaxation of protons of water in protein and amino acid solutions on the pH of the solution was investigated. It is established that a change in the mean molecular charge greatly effects the relaxation rate.
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